Process/Product Change Notices

This section lists the process change notices for Central Semiconductor devices.

Please note that Central Semiconductor complies with JEDEC standard JESD46: Customer Notification of Product/Process Changes by Solid-State Suppliers.

Lack of acknowledgement of a PCN within 30 days constitutes acceptance of the change.

To automatically receive Process Change Notices (PCN) you must be registered to my.centralsemi.com and subscribed to PCN/EOL Notifications.

PCN #
Notification Date
Extent of change
12 January 2017
The CPS041 wafer process has been discontinued and replaced with the CPS043 wafer process.
3 March 2016
Chip process CP319 used to manufacture NPN silicon power transistors, wafers, and bare die, has been discontinued and replaced with the CP212 wafer process.
13 August 2015
Thermal oxide deposition was deployed underneath the original oxide in order to improve the interface.
4 May 2015
The CP547 wafer process has been discontinued and replaced with the CP647 wafer process. The overall wafer diameter is being reduced from 5 inch to 4 inch. The die size and pattern has been changed; see figures 1 and 2 for details.
30 January 2015
The CP707 wafer process has been discontinued and replaced with the CP727V wafer process. The overall wafer diameter is being increased from 4 inch to 5 inch. The overall wafer thickness is being reduced from 9.0 mils to 7.1 mils. The backside metallization (Au) has been reduced. The die size and die pattern have been changed.
18 June 2014
The CP188 (NPN) and CP588 (PNP) wafer processes have been discontinued and replaced with the CP388X and CP788X processes respectively. The overall wafer diameter was increased from 4 inch to 5 inch.
24 June 2014
The CP517 wafer process has been discontinued and replaced with the CP527 wafer process. The overall wafer diameter is being reduced from 5 inch to 4 inch. The die pattern has been changed.
30 May 2014
The CP117 wafer process has been discontinued and replaced with the CP127 wafer process. The overall wafer diameter is being reduced from 5 inch to 4 inch. The die pattern has been changed.
19 February 2014
An additional manufacturing line was qualified to assemble the SOT-563 case. The SOT-563 mechanical dimensions were updated. A 2 character marking code as opposed to a 3 character marking code is being used to identify the additional manufacturing line. The additional marking codes will be listed on the individual device data sheets.
31 October 2013
This change affects chip process CP207, NPN silicon high speed saturated switching transistors, wafers, and bare die. The CP207 wafer process has been discontinued and replaced with the CP396V wafer process. The overall wafer diameter is being increased from 4 inch to 5 inch. The overall wafer thickness is being reduced from 8.0 mils to 7.1 mils. The die size and die pattern have been changed.
11 September 2013
This change affects the 1N5279B, 1N5280B, and 1N5281B high voltage Zener diodes in the DO-35 glass case. Case type is being changed from DO-35 glass case to DO-35A glass case. No changes are being made to the part numbers.
11 March 2013
This change affects CPD 04 wafer process: 0.5 A mp, glass passivated, standard recovery rectifiers. Extent of Change: Overall wafer thickness has been increased from 8.5 mils to 1 0 .5 mils. Reason for Change: To reduce wafer breakage during manufacturing processes.
9 January 2013
This change affects all discrete semiconductor devices manufactured in the SOD-523 package. Extent of Change: Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire. This change will insure an uninterrupted flow of product and provide increased flexibility for supply chain management.
12 November 2012
The CSHDD16-40C Series of Dual, Common Cathode, Silicon, Schottky Rectifiers in the D2PAK case. Alternate marking codes have been added to the product line to identify the manufacturing lines for internal traceability.
22 October 2012
All discrete semiconductor devices manufactured in the SOT-523 package. Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire. This change will insure an uninterrupted flow of product and provide increased flexibility for supply chain management.
18 October 2012
All discrete semiconductor devices manufactured in the SOT-563 package. Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire. This change will insure an uninterrupted flow of product and provide increased flexibility for supply chain management.
13 August 2012
Part # CPD06 wafer process; 3 Amp, glass passivated, general purpose rectifiers. Anode pad size was increased from 66 x 66 mils to 77 x 77 mils.The bonding pad area was increased to allow more process latitude in the assembly process; larger bonding pad area provides for use of larger bond wires or clips. The only change was the increase in the bonding pad area; no other changes in the wafer diffusion process were performed.
17 May 2012
Part # CMPT4209 in the SOT-23 epoxy molded case has been developed as Centrals primary device for low to medium current, PNP, high speed saturated switching applications as a replacement for the listed Part Numbers Affected".
17 May 2012
Part # PN4209 in the TO-92 epoxy molded case has been developed as Centrals primary device for low to medium current, PNP, high speed saturated switching applications as a replacement for the listed Part Numbers Affected.
30 April 2012
To accommodate assemblies of extremely small surface mount, epoxy molded packages, the CP716V chip process which currently measures 19.7 x 19.7 mils is being replaced by the CP736V chip process which measures 17.3 x 17.3 mils.
9 April 2012
The ESD packaging is being changed from a blue, poly bag to a silver, static shielded bag.
30 March 2012
All semiconductor devices currently manufactured in the TLM322 case. The leadframe used to manufacture the TLM322 case has been changed to allow device singularization to be performed by sawing instead of punching.
30 March 2012
All semiconductor devices currently manufactured in the TLM832D case. The leadframe used to manufacture the TLM832D case has been changed to allow device singularization to be performed by sawing instead of punching.
6 March 2012
All discrete semiconductor devices manufactured in the SOT-223 package. Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire. This change will insure an uninterrupted flow of product and provide increased flexibility for supply chain management.
1 February 2012
All discrete semiconductor devices manufactured in the SOT-89 package. Extent of Change: Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire. Reason for Change: This change will insure an uninterrupted flow of product and provide increased flexibility for supply chain management.
8 December 2011
To consolidate the small signal PNP saturated switching product portfolio due to low sales volume, part # CM4209 in the TO-18 metal case has been developed as Central's primary device for low to medium current, PNP, high speed saturated switching applications as a replacement for Part Numbers Affected on attached list.
2 November 2011
CBRSDSH5-40 and CBRSDSH5-60 full wave Schottky bridge rectifiers manufactured in the epoxy molded SMDIP case. The CBRSDSH5-40 and CBRSDSH5-60 are being discontinued and replaced with the CBRSDSH2-40 and CBRSDSH2-60.
5 October 2011
Chip process CP195, NPN small signal transistors, wafers, and die in chip form.
22 September 2011
BAV45, Silicon Picoampere diode manufactured in the TO-18 TWO LEADED metal case. The Matte tin (Sn) plating step has been removed from the manufacturing process.
8 June 2011
Chip process CPZ18, Zener Diode discrete semiconductors, wafers, and die in chip form. An overall reduction of the die area and die thickness. The CPZ18 chip process currently measures 13.8 x 13.8 x 7.5 mils and is being replaced by the CPZ28X chip processes which measures 13 x 13 x 5.5 mils.
13 June 2005
Chip process CP214, NPN RF transistors, wafers, and die in chip form. Die size and die pattern change. The CP214 chip process currently measures 16 x 16 mils and is being replaced by the CP229 chip process which measures 21.7 x 21.7 mils.
5 April 2011
CPD69 wafer process: 1 Amp, glass passivated, standard recovery rectifiers. Overall wafer thickness has been increased from 8.5 mils to 12.5 mils.
10 January 2009
All discrete semiconductor devices manufactured in the SOT-563 package. Alloy42 lead frame has been added as a qualified material for SOT-563 manufacturing in addition to the currently used copper alloy lead frame.
1 February 2011
BAW101, dual, isolated, high voltage switching diodes in the SOT-143 epoxy molded case. Alternate marking code has been added to product line.
1 October 2010
Zener diodes and switching diodes in the DO-35 glass case. Alternate marking format has been added to product line.
16 December 2010
Small signal discrete semiconductor wafers. Wafer diameter has been changed from 4" to 5". This change does not affect the physical or electrical characteristics of any device. Gross die quantities per wafer have been increased.
19 October 2010
Chip process CP316V, NPN high voltage transistors, wafers, and die in chip form. The CP316V chip process currently measures 20 x 20 mils and is being replaced by the CP336V chip process which measures 17.3 x 17.3 mils.
5 August 2010
All surface mount Current Limiting Diodes (CLDs) manufactured in the SOD-80 case. Devices that are presently packaged in the SOD-80 case are being replaced by their electrical equivalents in the epoxy molded SOD-123FL case.
11 June 2010
Schottky diodes manufactured in the SOD-123, SOT-23, and SOT-323 packages and Transient Voltage Suppressors manufactured in the SOT-23 package. Tin (Sn) wafer backside metal has been added as a qualified material in addition to the currently used gold (Au) backside metal.
25 June 2010
All discrete semiconductor devices manufactured in the SOD-123, SOT-23, and SOT-323 packages. Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire.
31 March 2010
The leadframe used to manufacture the TLM833 case has been changed to allow device singularization to be performed by sawing instead of punching.
21 April 2009
Chip process CPD64, Low Leakage Diode discrete semiconductors, wafers, and die in chip form. The overall wafer diameter is being increased from 4 inch to 5 inch. The overall die thickness is being reduced from 8 mils to 5.9 mils.
21 April 2009
An overall reduction of the die area. The CPD41 chip process currently measures 20 x 20 mils and is being replaced by the CPD93V chip process which measures 12.8 x 12.8 mils.
3 January 2008
An overall reduction of the die area. The CPZ19 chip process currently measures 17.7 x 17.7 mils and is being replaced by the CPZ28 chip process which measures 13 x 13 mils.
29 June 2006
An overall reduction of the die area. The CP192V chip process currently measures 13 x 17 mils and is being replaced by the CP392V chip process which measures 11 x 11 mils. The CP592V chip process currently measures 12 x 20 mils and is being replaced by the CP792V chip process which measures 11 x 11 mils.
22 September 2005
5.0W Zener diodes packaged in the AX-5W case replaced by devices packaged in the DO-201 case.
24 November 2004
Small signal wafer thickness reduced from 9.0 mils to 7.1 mils.
24 November 2004
SOD-80 cylindrical case replaced by flat SOD-123 case.
20 January 2003
TO-92 -18R lead formed package
12 November 2001
Dimension change to all Bridge Rectifiers in DIPpackage
12 November 2001
Dimension change to all Bridge Rectifiers in SMDIPpackage