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CXDM3069N (30V, 6.9A N-Channel)
CXDM4060N (40V, 6.0A N-Channel)
CXDM6053N (60V, 5.3A N-Channel)
CXDM4060P (40V, 6.0A P-Channel)

MOSFETs in the SOT-89 package

SOT-89 Package

Description
Central Semiconductor’s CXDM3069N, CXDM4060N, CXDM6053N and CXDM4060P devices are high current N-channel and P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications.

 

Request samples of the CXDM3069N, CXDM4060N,
CXDM6053N or CXDM4060P today.


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  CXDM3069N
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  CXDM4060N
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  CXDM6053N
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  CXDM4060P
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RoHSHalogen Free by design

 

Features
• Low rDS(ON)
• High current
• Low gate charge
• Low threshold voltage

Applications
Load/Power switches
• Power supply converter circuits
Battery powered portable equipment

Benefits
Energy efficiency
• High power density

• Industry standard package

Typical Electrical Characteristics

Drain Current CurveProcess Curve

 


 
Datasheet for the CXDM3069N:
Material Composition Data
for the SOT-89 package:
 
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Datasheet for the CXDM4060N:
Product Brief:
 
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Datasheet for the CXDM6053N:
 
 
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Datasheet for the CXDM4060P:
 
 
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Product Details for the CXDM3069N:
 
 
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Product Details for the CXDM4060N:
 
 
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Product Details for the CXDM6053N:
 
 
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Product Details for the CXDM4060P:
 
 
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For more information on this product,
contact Central Semiconductor Corp. at
631-435-1110
or
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