Silicon Carbide Schottky Rectifier Die

Silicon Carbide Schottky Rectifier Die

650V - 4A, 6A, 8A, 10A, 30A | 1200V - 2A, 5A, 10A, 50A


Central Semiconductor’s latest Silicon Carbide Schottky rectifier die portfolio is optimized for high temperature applications. Parametrically, these devices are energy efficient as a result of low total conduction losses and minimal changes to switching characteristics as a function of temperature. 650V devices are available in 4A, 6A, 8A, 10A, 30A options, and 1200V devices are available in 2A, 5A, 10A, and 50A options.

Device specifications and curves may be found on the product brief and datasheets.


  • Positive temperature coefficient
  • Low reverse leakage current
  • Temperature independent switching characteristics
  • High operating junction temperature


  • Metallization suitable for standard die attach technologies
  • Top metallization optimized for wire bonding
  • Wide current range
  • Power efficiency

alternative energy inverters
industrial motor drives
switch-mode power supplies
power factor correction
over-current protection