![GaN FETs](/files/productGroups/30/featuredProductGroups/42/Featured_Prod_GNN-CF_inner-39.jpg)
GaN FETs
Up to 650V capability in space-saving DFN and chip scale packaging.
Description
Central Semiconductor's Gallium Nitride (GaN) N-Channel FETs combine high voltage capability with low rDS(ON) and are designed for soft-switching applications with high efficiency standards. The space-saving DFN and chip scale packaging is ideal for application in high power wireless charging, Power Factor Correction (PFC), and electric vehicle inverters. These GaN FETs are offered in 100V that supports 60A or 650V that supports 11A or 17A. 40V supporting 20A or 50A and bare dies are available upon demand.
Features
- High voltage capability
- Low gate charge & rDS(ON) as low as 3.2mΩ
- Efficient fast switching
Benefits
- Minimal power loss in conduction
- High frequency switching capability
- No reverse recovery loss
Datasheets & Samples
CCSPG1060N | 100V, 60A | CSP3.5x2 Request samples
CCSPG0420N | 40V, 20A | CSP2X2 Request samples
CCSPG0450N | 40V, 50A | CSP5X4 Request samples
CCSPG1560N | 150V, 60A | CSP4X6 Request samples
CCSPG1510N | 150V, 100A | CSP4X6 Request samples
CDF56G6511N | 650V, 11.5A | DFN5X6A Request samples
CDF56G6517N | 650V, 17A | DFN5X6A Request samples
CDFG6511N | 650V, 11.5A | DFN8X8 Request samples
CDFG6517N | 650V, 17A | DFN8X8 Request samples