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2017
  • Press Release: Central Semiconductor Corp.Central Semiconductor introduces the CSICD05-1200 (5A, 1200V) and CSICD10-1200 (10A, 1200V) Silicon Carbide Schottky rectifiers, featuring the true 2-lead DPAK-2L (TO-252-2L) package. Both devices are ideal for high frequency systems where energy efficiency, low switching losses and thermal performance are critical design parameters. Silicon Carbide provides a stable solution for a wide range of temperatures and the DPAK-2L case eliminates potential arcing concerns experienced when using high operating voltages with the standard DPAK package.

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2016
  • Press Release: Central Semiconductor Corp. is pleased to announce a distribution agreement with Avnet, Inc., a leading global technology distributor. Effective immediately, Central Semiconductor’s entire line of discrete semiconductors is available for purchase by customers in the Americas through Avnet’s broadline components Electronics Marketing group and Avnet USI, Avnet’s defense/aerospace specialty distribution business unit.

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  • Press Release: Central Semiconductor Corp. Central Semiconductor introduces its newest energy efficient, high voltage UltraMOS™ MOSFET designed to minimize total conduction losses while maximizing power density. The CDM2206-800LR is a 6A, 800V MOSFET in the TO-220 package. The low RDS(ON) of 0.8Ω and low total gate charge of 24.3nC are key energy efficiency characteristics of this UltraMOS™ device, which surpasses the operational performance of similarly rated standard MOSFETs.

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  • Press Release: Central Semiconductor Corp. Central Semiconductor introduces its newest energy efficient, high voltage UltraMOS™ MOSFET designed to minimize total conduction losses while maximizing power density. The CDM22012-800LRFP is a 12A, 800V MOSFET in the TO-220FP (Full Pack) package. The low rDS(ON) of 0.37Ω and low total gate charge of 7.6nC are key energy efficiency characteristics of this UltraMOS™ device, which surpass the operational performance of similarly rated standard MOSFETs.

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2015
  • Press Release: Central Semiconductor Corp. introduces its new energy efficient, high voltage UltraMOS™ MOSFETs designed to minimize total conduction losses while maximizing power density. The initial release of this new family consists of the CDM4-600LR (4A in a DPAK), CDM7-600LR (7A in a DPAK) and CDM22011-600LRFP (11A in a TO-220FP). The key energy efficiency characteristics of UltraMOS™ devices include lower rDS(ON) (as low as 0.3Ω) and lower total gate charge (as low as 11.59nC). These devices well exceed the operational performance of similarly rated standard MOSFETs.

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  • New Product Announcement: Central Semiconductor's CDM3-800 (3A, in DPAK), CDM2205-800FP (5A, in TO-220FP) and CDM2208-800FP (8A, in TO-220FP) are 800 volt N-Channel MOSFETs ideal for high voltage, fast switching applications such as Power Factor Correction (PFC), Solid State Lighting (SSL), and power inverters. These MOSFETs combines high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency.

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  • Press Release: Central Semiconductor Corp. a leading manufacturer of innovative discrete semiconductors and g lobal electronic components distributor Digi-Key Electronics , the industry leader in electronic component selection, availability and delivery today announced that select devices from Central Semiconductor are available in bare die form. For space - restrict ed prototypes in the wearables, handheld devices and gaming markets, as well as other package - free requirements, design engineers can now purchase the new bare die devices directly from Digi-Key’s website.

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  • TO-92 Shortages: The industry is experiencing TO-92 shortages. Central has devices in stock for immediate delivery.

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