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Silicon Carbide Schottky Rectifiers
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Maximum Ratings (TC =25°C unless otherwise noted) Electrical Characteristics (TJ =25°C unless otherwise noted)
Process
Principal
VRRM
IO
PD
TJ, Tstg
IFSM
VF
@ IF
IR
@ VR
 
Device 
 
TC =130°C
 
 
 
*TJ =175°C
 
*TJ =175°C
 
   
 
 
 
 
 
 
 
 
 
 
 
 
 
(V)
(A)
(W)
(°C)
(A)
(V)
(V) 
(A)
 (µA)
 (µA)
(V)
 
 
MAX
MAX
MAX 
MAX
MAX
TYP
MAX
 
TYP
MAX
 
NPN
CSIC10-1200
1200
10
150
-55 to +175
50
1.55
*2.3
1.8
*3.0
10
10
60
*0.09mA
400
*1.0mA
1200
1200
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