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CWDM305N (Single, 5.8A N-Channel)
CWDM305ND (Dual, 5.8A N-Channel)
CWDM305P (Single, 5.3A P-Channel)
CWDM305PD (Dual, 5.3A P-Channel)

30V, MOSFETs
in the SOIC-8 package

SOIC-8 package

Description
Central Semiconductor’s CWDM305N, CWDM305P, CWDM305PD, and CWDM305ND are high current enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer high current, low rDS(ON), low threshold voltage, and low gate charge.

Features
Low rDS(ON)
• High current
Low threshold voltage
Low gate charge

Applications
Load/Power switches
• Power supply converter circuits
Battery powered portable equipment

Benefits
• Energy efficiency
• High power density
Industry standard package



Request samples of the CWDM305N, CWDM305P, CWDM305ND or CWDM305PD today.


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Typical Electrical Characteristics

Process Curve

Curve n-channel

RoHSHalogen Free by design


  Datasheet for the CWDM305N: Product Brief:
  View_Datasheet View_Product_brief
  Datasheet for the CWDM305P:  
  View_Datasheet  
  Datasheet for the CWDM305PD:  
  View_Datasheet  
  Datasheet for the CWDM305ND:  
  View_Datasheet  
     
  Product Details for the CWDM305N:  
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  Product Details for the CWDM305P:  
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  Product Details for the CWDM305PD:  
  View_Details  
  Product Details for the CWDM305ND:  
  View_Details  
     

 

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For more information on this product,
contact Central Semiconductor Corp. at
631-435-1110
or
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