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CWDM3011N (Single, N-Channel)
CWDM3011P (Single, P-Channel)

30V, 11A, MOSFETs in the SOIC-8 package

SOIC-8 package

Description
Central Semiconductor’s CWDM3011N and CWDM3011P are high current enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer high current, low rDS(ON), low threshold voltage, and low gate charge.

Features
• Low rDS(ON)
• High current
• Low threshold voltage
• Low gate charge

Applications
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment

Benefits
• Energy efficiency
• High power density
• Industry standard package

 

Request samples of the CWDM3011N or
CWDM3011P today.


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RoHSHalogen Free by design

 

Typical Electrical Characteristics

Curves

 

P-Channel Curve


 
Datasheet for the
CWDM3011N:
Datasheet for the
CWDM3011P:
Package Detail with Material Composition Data
for the SOIC-8 package:
 
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Product Details for
CTLSH01-30:
Product Details for
CTLSH01-30L:
Product Brief for
CTLSH01-30:
 
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For more information on this product,
contact Central Semiconductor Corp. at
631-435-1110
or
contact your local sales representative
     
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