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CTLDM303N-M832DS (30V, 3.6A N-Channel)
CTLDM304P-M832DS (30V, 4.2A P-Channel)

Dual, MOSFETs
in the TLM832DS package

Description
Central Semiconductor’s CTLDM303N-M832DS (Dual, N-Channel) and CTLDM304P-M832DS (Dual, P-Channel) are enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These energy efficient MOSFETs offer beneficially low rDS(ON), low gate charge, and low threshold voltage.

 

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or CTLDM304P-M832DS today.


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  CTLDM303N-M832DS
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  CTLDM304P-M832DS
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RoHSHalogen Free by design

 

Features
• Low rDS(ON)
• High current
• Low gate charge

Applications
DC-DC converters
• Drive circuits
Power management

Benefits
High current density
• Energy efficiency

Device Curve


 
Datasheet for the CTLDM303N-M832DS:
Material Composition Data
for the TLM832DS package:
 
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Datasheet for the CTLDM304P-M832DS:
Product Brief:
 
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Product Details for the CTLDM303N-M832DS:
 
 
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Product Details for the CTLDM304P-M832DS:
 
 
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631-435-1110
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