Logo
Cart  Sample Cart Part Search Submit question Contact Us my.Centralsemi  
 

Press Releases
2011
  • 8/30/11 - Central Semiconductor Corp. announces the CTLSH01-30 and CTLSH01-30L Low VF Schottky diodes in the space saving, low profile TLM2D3D6 surface mount package. These new devices have a peak reverse voltage rating of 30V and a maximum forward current rating of 100mA. The CTLSH01-30 has a low forward voltage drop (VF) of 410mV at 10mA and an outstanding low reverse leakage current (IR ) of 30nA, while the CTLSH01-30L provides an even lower VF of 300mV. Both of these devices are ideal for space constrained designs requiring superior energy efficiency.


    learn_more

 
  • 7/19/11 - Central Semiconductor Corp. introduces the CMPDM203NH 20V, 3.2A N-Channel and complementary CMPDM202PH 20V, 2.3A P-Channel MOSFETs. These devices, packaged in the industry standard SOT-23F, have low rDS(ON) characteristics of 50mΩ and 88mΩ respectively.


    learn_more

  • 6/13/11 - Central Semiconductor Corp. introduces the 30V, 100mA CFSH01-30L low VF Schottky diode in the space saving/low profile SOD-882L package.


    learn_more

  • 6/1/11 - Central Semiconductor Corp. introduces the 10A, 100V CSHD10-100C Schottky rectifier in the DPAK package. This device consists of two 5A Schottky rectifiers in a common cathode configuration.


    learn_more

  • 5/9/11 - Central Semiconductor Corp. announces the introduces the new 20V,100mA CMNDM7001 (N-Channel) and
    CMNDM8001
    (P-Channel) MOSFETs in the ultra miniature SOT-953 package. These complementary devices extend Central’s range of energy efficient MOSFETs. They provide space saving solutions for battery powered portable products such as cellular
    phones, MP3 players, glucose blood analyzers, and hearing aids. Applications include load/power switching, DC-DC conversion, and servo motor control.


    learn_more

  • 4/26/11 - Central Semiconductor Corp. announces the introduces the CMPDM302PH 30V, 2.4A P-Channel MOSFET. The CMPDM302PH in the industry standard SOT-23F package has an exceptional continuous drain current rating of 2.4A. The combination of an excellent on-resistance, rDS(ON), of 61mΩ and a very low gate charge, Qgs, of 2.8nC makes this device
    the ideal energy efficient solution for higher current, space constrained power management
    applications.


    learn_more

  • 4/12/11 - Central Semiconductor Corp. announces the introduction of the 30V, 450mA CMUDM7004 (N-Channel) and CMUDM8004 (P-Channel) MOSFETs in the space saving SOT-523 package. These complementary devices broaden Central’s range of energy efficient MOSFETs providing a wider variety of options for numerous applications including load/power switching, DC-DC conversion, and servo motor control.


    learn_more

  • 3/22/11 - Central Semiconductor Corp. announces the CFSH2-3L Low VF Schottky diode in the space saving, low profile SOD-882L package. This new device has a peak repetitive reverse voltage of 30V and a maximum forward current of 200mA. The exceptional low forward voltage drop of 240mV at 10mA makes the CFSH2-3L the perfect choice for space constrained designs requiring superior energy efficiency.


    learn_more

  • 3/1/11 - Central Semiconductor Corp. announces the introduction of the CMLDM3757 dual, complementary N-Channel and P-Channel MOSFETs packaged in the ultra miniature SOT-563 surface mount case. Both devices have a maximum rated Drain-Source voltage of 20V, and a minimum Gate-Source threshold voltage of 450mV. The N-Channel device has a maximum continuous Drain current of 540mA with a low rDS(ON) of 550mΩ, while the P-Channel has a 430mA rating and a rDS(ON) of 900mΩ.


    learn_more

  • 2/8/11 - Central Semiconductor Corp. announces the introduction of the CMLDM7484 dual complementary N-Channel and P-Channel MOSFETs in the space saving SOT-563 package. This new device consists of two complementary isolated 30V, 450mA MOSFETs that offer superior energy efficiency. The device satisfies the need for a single package solution that provides high current capability, low rDS(ON) and an extremely small footprint.


    learn_more

  • 1/11/11 - Central Semiconductor Corp. announces the introduction of the CMPDM303NH high current, low rDS(ON), N-Channel MOSFET. The CMPDM303NH in the industry standard SOT-23F package, has an exceptional continuous drain current rating of 3.6A. The combination of an excellent on-resistance, rDS(ON), of 27mΩ and a very low total gate charge, Qg, of 8.8 nC makes this device the ideal energy efficient solution for higher current, space constrained applications.


    learn_more

Press Releases
Help