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Press Releases
2010
  • 10/12/10 - Central Semiconductor Corp. announces the introduction of the CMLM0574 integrated MOSFET and Schottky diode packaged in the ultra miniature SOT-563 surface mount case. The CMLM5074 consists of a 30V, 450mA N-Channel MOSFET and a 40V, 500mA low VF Schottky diode. This integrated device is optimal for space constrained applications where energy efficiency is a requirement.


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  • 9/7/10 - Central Semiconductor Corp. announces the introduction of the CMRD6263DO dual isolated 70V, 15mA Schottky diodes packaged in the ultra miniature SOT-963 surface mount case. This device has an outstanding low VF of 0.395V typical and a fast switching speed of less than 5.0ns.


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  • 8/10/10 - The new Central Semiconductor CEDM7001 (N-Channel) and CEDM8001 (P-Channel) are 20V, 100mA MOSFETs packaged in the ultra miniature, low profile SOT-883L surface mount case. These devices have a rated continuous drain current of 100mA and a peak drain current of 200mA (tp<10µs).


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  • 7/21/10 - Central Semiconductor Corp. announces the introduction of the CMRSH-4DO dual isolated 40V, 200mA Schottky diodes packaged in the ultra miniature SOT-963 surface mount case. This device has an outstanding low VF of 0.35V and a fast switching speed of 5.0ns.


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  • 6/2/10 - Central Semiconductor Corp. announces the release of the CMPS5064 Silicon Controlled Rectifier (SCR) due to high customer demand. This device packaged in SOT-23 is a 400V, 0.8A SCR designed for applications with space constraints requiring a fast switching high voltage device.


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  • 4/21/10 - Central Semiconductor Corp. announces the release of the CMRDM3575 dual complementary N and P-Channel MOSFETs. This device consists of a 20V, 160mA N-Channel and a 20V, 140mA P-Channel MOSFET packaged in the ultra miniature SOT-963 surface mount case. This new device is an integrated solution designed for circuits requiring both N-Channel and complementary P-Channel MOSFETs.


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  • 2/25/10 - Central Semiconductor Corp. announces the release of the CMLM8205 Multi Discrete Module in the SOT-563 surface mount package. This device features a 50V, 280mA P-channel enhancement mode MOSFET and an isolated 40V, 500mA low VF Schottky diode. The MOSFET has a minimum gate threshold of 1.0V and the Schottky diode has a low forward voltage drop of 0.35V at 100mA.


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  • 1/26/10 - Central Semiconductor Corp. announces the release of the CBRHDSH2-100 Schottky Bridge Rectifier packaged in the HD DIP case. This new energy efficient device has a low reverse leakage current of 0.7uA and addresses the need for a space saving 2A, 100V full wave bridge rectifier essential for today’s power management, solid state lighting, and power over ethernet applications.


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