New Products
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Dual, N-Channel MOSFETs with built-in ESD protection
CMLDM7003
50V, 280mA
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The CMLDM7003 is a dual N-Channel Enhancement-mode MOSFET with built-in 2kV ESD protection. This device has two isolated 50V, 280mA MOSFETs with a transient voltage suppressor across the source and gate as an added protection against high voltage transient conditions. The rDS(ON) of the device is 3.0Ω (at ID=50mA and VGS=1.8V).
The CMLDM7003 is packaged in the tiny surface mount SOT-563 case with a low profile of less than 0.6mm. This package utilizes 62% less board space than a SOT-23 and is the perfect choice for small portable battery powered electronic products. The CMLDM7003 is ideal for cell phones/Smart phones, MP3 music players, medical test equipment, bar code scanners, PDAs, and notebook computers.
The CMLDM7003 is available bulk packed or 3,000 pcs on 7” tape & reel. Sample devices are available upon request.
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Datasheet  |
| CMLDM7003 |
Dual, 50V, 280mA MOSFETs with 2kV ESD protection in the SOT-563 package.
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Maximum Ratings: (TA=25°C) |
| VDS |
= |
50V |
| VDG |
= |
50V |
| VGS |
= |
12V |
| ID |
= |
280mA |
| IDM |
= |
1.5A |
| PD(1) |
= |
350mW |
| PD(2) |
= |
300mW |
| PD(3) |
= |
150mW |
| TJ, Tstg |
= |
-65 to +150°C |
| ΘJA |
= |
357°C/W |
| Notes: |
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(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm²
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(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm²
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(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm² |
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Key Electrical Characteristics:
(TA=25°C, unless otherwise noted)
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Test condition |
Min |
Typ |
Max |
| BVDSS |
(@ VGS=0V, ID,=10µA) |
50V |
50V |
- |
| IDSS |
(@ VDS=50V, VGS=0V) |
- |
- |
50nA |
| IGSS, IGSSR |
(@ VGS=5.0V) |
- |
- |
100nA |
| IGSS, IGSSR |
(@ VGS=10V) |
- |
- |
2.0µA |
| IGSS, IGSSR |
(@ VGS=12V) |
- |
- |
2.0µA |
| VGS(th) |
(@ VDS=VGS, ID=250µA) |
0.49V |
- |
1.0V |
| VSD |
(@ VGS=0V, IS=115mA) |
- |
- |
1.4V |
| rDS(ON) |
(@ VGS=1.8V, ID=50mA) |
- |
1.6Ω |
3.0Ω |
| rDS(ON) |
(@ VGS=2.5V, ID=50mA) |
- |
1.3Ω |
2.5Ω |
| rDS(ON) |
(@ VGS=5.0V, ID=50mA) |
- |
1.1Ω |
2.0Ω |
| gFS |
(@ VDS=10V, ID=200mA) |
200mS |
- |
- |
| Crss |
(@ VDS=25V, VGS=0, f=1.0MHz) |
- |
- |
5.0pF |
| Ciss |
(@ VDS=25V, VGS=0, f=1.0MHz) |
- |
- |
50pF |
| Coss |
(@ VDS=25V, VGS=0, f=1.0MHz) |
- |
- |
25pF |
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Request samples:
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