CTLT3410-M621 (NPN)
CTLT7410-M621 (PNP)
40V, 1.0A Low V_CE(SAT) Transistors in miniature TLM621 package

Central Semiconductor Corp. introduces the CTLT3410-M621 (NPN) CTLT7410-M621 (PNP) transistors in the TLM621 package. These devices have a low V_CE(SAT) characteristic making them ideal energy efficient space saving solutions

Schottky Rectifiers
New 200V Schottky rectifiers in space saving surface mount packages.

March 14, 2012 – Central Semiconductor Corp. introduces a new portfolio of 200 volt surface mount Schottky rectifiers designed for high voltage applications traditionally fulfilled by inefficient standard rectifier products. This new extended range of devices includes: CMSH1-200HE (1A, 200V, SMA), CMSH3- 200MHV (3A, 200V, SMB), CMSH5-200HV (5A, 200V, SMC), and a bridge rectifier CBRHDSH1-200 (1A, 200V, HD DIP).

CTLSH01-30
CTLSH01-30L
30V, 100mA Low VF Schottky Diodes in the TLM2D3D6 package

Auguat 30, 2011 - Central Semiconductor Corp. announces the CTLSH01-30 and CTLSH01-30L Low V_F Schottky diodes in the space saving, low profile TLM2D3D6 surface mount package. These new devices have a peak reverse voltage rating of 30V and a maximum forward current rating of 100mA. The CTLSH01-30 has a low forward voltage drop (V_F) of 410mV at 10mA and an outstanding low reverse leakage current (I_R ) of 30nA, while the CTLSH01-30L provides an even lower V_F of 300mV. Both of these devices are ideal for space constrained designs requiring superior energy efficiency.

CMPDM203NH (20V, 3.2A N-Channel)
CMPDM202PH (20V, 2.3A P-Channel)
Complementary MOSFETs in the SOT-23F package

July 19, 2011 - Central Semiconductor Corp. introduces the CMPDM203NH (N-Channel) and complementary CMPDM202PH (P-Channel) MOSFETs in the SOT-23F package. These devices optimize high current capability and energy efficiency.

CFSH01-30L
30V, 100mA Schottky Diode in the SOD-882L package

June 13, 2011 - Central Semiconductor Corp. introduces the CFSH01-30L Schottky diode in the SOD-882L package. This device is a 30V, 100mA Schottky diode ideal for space constrained applications.

CSHD10-100C
10A, 100V Schottky Rectifier in the DPAK package

June 1, 2011 - Central Semiconductor Corp. introduces the 10A, 100V CSHD10-100C Schottky rectifier in the DPAK package. This device consists of two 5A Schottky rectifiers in a common cathode configuration.

CMNDM7001 (N-Channel) & CMNDM8001 (P-Channel)
MOSFETs in the SOT-953 package

May 9, 2011 - Central Semiconductor Corp. introduces the new 20V,100mA CMNDM7001 (N-Channel) and CMNDM8001 (P-Channel) MOSFETs in the ultra miniature SOT-953 package. These complementary devices extend Central’s range of energy efficient MOSFETs.

CMPDM302PH
P-Channel MOSFET
in the SOT-23F package

April 26, 2011 - Central Semiconductor Corp. introduces the CMPDM302PH 30V, 2.4A P-Channel MOSFET featuring Low r_DS(on) and Low Threshold Voltage.

CMUDM7004 (N-Channel) and CMUDM8004 (P-Channel)
Complementary
N-Channel and P-Channel MOSFETs
in the SOT-523 package

April 12, 2011 - Central Semiconductor Corp. announces the introduction of the CMUDM7004 and CMUDM8004 30V, 450mA complementary Enhancement-mode MOSFETs featuring Low r_DS(on) and Low Threshold Voltages.

CFSH2-3L
Low V_F Schottky diode
in the space saving SOD-882L package

March 22, 2011 - Central Semiconductor Corp. announces the introduction of the CFSH2-3L 30V, 200mA low V_F Schottky diode in the space saving, low profile SOD-882L surface mount package. This device is ideal for portable handheld designs where ultra small size, low profile, and exceptional operational efficiency are prime requirements.

CMLDM3757
Space Saving N-Channel and P-Channel
Complementary MOSFETs
in the SOT-563 package

March 1, 2011 - Central Semiconductor Corp. announces the introduction of the CMLDM3757 dual, complementary N-Channel and P-Channel MOSFETs packaged in the ultra miniature SOT-563 surface mount case. Both devices have a maximum rated Drain-Source voltage of 20V, and a minimum Gate-Source threshold voltage of 450mV. The N-Channel device has a maximum continuous Drain current of 540mA with a low r_DS(ON) of 550mΩ, while the P-Channel has a 430mA rating and a r_DS(ON) of 900mΩ.

CMLDM7484
N-Channel and P-Channel
Complementary MOSFETs
in the SOT-563 package

February 8, 2011 - Central Semiconductor Corp. announces the introduction of the CMLDM7484 dual complementary N-Channel and P-Channel MOSFETs in the space saving SOT-563 package. This new device consists of two complementary isolated 30V, 450mA MOSFETs that offer superior energy efficiency. The device satisfies the need for a single package solution that provides high current capability, low r_DS(ON) and an extremely small footprint.

CMPDM303NH
High Current  /  Low r_DS(ON)
N-Channel MOSFET
in the SOT-23F package

January 11, 2011 - Central Semiconductor Corp. announces the introduction of the CMPDM303NH high current, low r_DS(ON), N-Channel MOSFET. The CMPDM303NH in the industry standard SOT-23F package, has an exceptional continuous drain current rating of 3.6A. The combination of an excellent on-resistance, r_DS(ON), of 27mΩ and a very low total gate charge, Qg, of 8.8 nC makes this device the ideal energy efficient solution for higher current, space constrained applications.