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Low Leakage Diodes  
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Devices are listed in order of ascending IR
Type No.
Case
Description
VRRM
IO
IR
@VR
VF
@IF
CT
Chip Process
 
 
 
 
 
 
 
 
 
 
Electrical
 
 
 
(V)
(mA)
(nA)
(V)
(V)
(mA)
(pF)
Characteristic
 
 
 
MAX
MAX
MAX 
 
MAX
 
MAX
Curves
Single, High Voltage
200
200
1.0
125
1.1
200
4.0
Dual, Common Anode, High Voltage
200
200
1.0
125
1.1
200
4.0
Dual, Common Cathode, High Voltage
200
200
1.0
125
1.1
200
4.0
Dual, In Series,
High Voltage
200
200
1.0
125
1.1
200
4.0
Single, High Voltage
200
200
1.0
125
1.1
200
4.0
Dual, Isolated Opposing, Low Leakage, Switching
200
200
1.0
125
1.1
200
4.0
Single, High Voltage
200
200
1.0
125
1.1
200
4.0
Dual, Isolated,
High Voltage
200
200
1.0
125
1.1
200
4.0
Dual, Isolated,
High Voltage
200
200
1.0
125
1.1
200
4.0
Single, High Voltage
150
150
1.0
125
1.0
200
8.0
Single, High Voltage
150
150
1.0
125
1.0
200
8.0
Single, High Voltage
200
200
25
175
1.0
100
6.0
Single, High Voltage
200
200
25
175
1.0
100
6.0
Single, High Voltage
70
200
25
60
1.0
100
6.0
Single, High Voltage
70
200
25
60
1.0
100
6.0

Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
TEL (631) 435-1110
FAX (631) 435-1824