• 4/24/12 - Central Semiconductor Corp., a preferred manufacturer of innovative discrete semiconductors announces the
  CTLT3410-M621 (NPN) and CTLT7410-M621 (PNP) transistors in the space saving, low profile TLM621 surface mount package. These new devices are rated at 1.0A of continuous collector current, 25V collector-to-emitter voltage and have an energy efficient low V_CE(SAT) of 25mV for NPN and 30mV for PNP. The ultra small TLM621 leadless package has a low profile of 0.8mm, utilizes a mere 2.47 sq mm of board space and features superior power dissipation of 900mW.
  
  
  

• 3/14/12 - Central Semiconductor Corp., a preferred manufacturer of innovative discrete semiconductors introduces a new portfolio of 200 volt surface mount Schottky rectifiers designed for high voltage applications traditionally fulfilled by inefficient standard rectifier products. This new extended range of devices includes: CMSH1-200HE (1A, 200V, SMA), CMSH3- 200MHV (3A, 200V, SMB), CMSH5-200HV (5A, 200V, SMC), and a bridge rectifier CBRHDSH1-200 (1A, 200V, HD DIP).
  
  
  

• 8/30/11 - Central Semiconductor Corp. announces the CTLSH01-30 and CTLSH01-30L Low V_F Schottky diodes in the space saving, low profile TLM2D3D6 surface mount package. These new devices have a peak reverse voltage rating of 30V and a maximum forward current rating of 100mA. The CTLSH01-30 has a low forward voltage drop (V_F) of 410mV at 10mA and an outstanding low reverse leakage current (I_R ) of 30nA, while the CTLSH01-30L provides an even lower V_F of 300mV. Both of these devices are ideal for space constrained designs requiring superior energy efficiency.
  
  
  

• 7/19/11 - Central Semiconductor Corp. introduces the CMPDM203NH 20V, 3.2A N-Channel and complementary CMPDM202PH 20V, 2.3A P-Channel MOSFETs. These devices, packaged in the industry standard SOT-23F, have low rDS(ON) characteristics of 50mΩ and 88mΩ respectively.
  
  
  

• 6/13/11 - Central Semiconductor Corp. introduces the 30V, 100mA CFSH01-30L low V_F Schottky diode in the space saving/low profile SOD-882L package.
  
  
  

• 6/1/11 - Central Semiconductor Corp. introduces the 10A, 100V CSHD10-100C Schottky rectifier in the DPAK package. This device consists of two 5A Schottky rectifiers in a common cathode configuration.
  
  
  

• 5/9/11 - Central Semiconductor Corp. announces the introduces the new 20V,100mA CMNDM7001 (N-Channel) and
  CMNDM8001 (P-Channel) MOSFETs in the ultra miniature SOT-953 package. These complementary devices extend Central’s range of energy efficient MOSFETs. They provide space saving solutions for battery powered portable products such as cellular
  phones, MP3 players, glucose blood analyzers, and hearing aids. Applications include load/power switching, DC-DC conversion, and servo motor control.
  
  
  

• 4/26/11 - Central Semiconductor Corp. announces the introduces the CMPDM302PH 30V, 2.4A P-Channel MOSFET. The CMPDM302PH in the industry standard SOT-23F package has an exceptional continuous drain current rating of 2.4A. The combination of an excellent on-resistance, r_DS(ON), of 61mΩ and a very low gate charge, Q_gs, of 2.8nC makes this device
  the ideal energy efficient solution for higher current, space constrained power management
  applications.
  
  
  

• 4/12/11 - Central Semiconductor Corp. announces the introduction of the 30V, 450mA CMUDM7004 (N-Channel) and CMUDM8004 (P-Channel) MOSFETs in the space saving SOT-523 package. These complementary devices broaden Central’s range of energy efficient MOSFETs providing a wider variety of options for numerous applications including load/power switching, DC-DC conversion, and servo motor control.
  
  
  

• 3/22/11 - Central Semiconductor Corp. announces the CFSH2-3L Low V_F Schottky diode in the space saving, low profile SOD-882L package. This new device has a peak repetitive reverse voltage of 30V and a maximum forward current of 200mA. The exceptional low forward voltage drop of 240mV at 10mA makes the CFSH2-3L the perfect choice for space constrained designs requiring superior energy efficiency.
  
  
  

• 3/1/11 - Central Semiconductor Corp. announces the introduction of the CMLDM3757 dual, complementary N-Channel and P-Channel MOSFETs packaged in the ultra miniature SOT-563 surface mount case. Both devices have a maximum rated Drain-Source voltage of 20V, and a minimum Gate-Source threshold voltage of 450mV. The N-Channel device has a maximum continuous Drain current of 540mA with a low r_DS(ON) of 550mΩ, while the P-Channel has a 430mA rating and a r_DS(ON) of 900mΩ.
  
  
  

• 2/8/11 - Central Semiconductor Corp. announces the introduction of the CMLDM7484 dual complementary N-Channel and P-Channel MOSFETs in the space saving SOT-563 package. This new device consists of two complementary isolated 30V, 450mA MOSFETs that offer superior energy efficiency. The device satisfies the need for a single package solution that provides high current capability, low r_DS(ON) and an extremely small footprint.
  
  
  

• 1/11/11 - Central Semiconductor Corp. announces the introduction of the CMPDM303NH high current, low r_DS(ON), N-Channel MOSFET. The CMPDM303NH in the industry standard SOT-23F package, has an exceptional continuous drain current rating of 3.6A. The combination of an excellent on-resistance, r_DS(ON), of 27mΩ and a very low total gate charge, Q_g, of 8.8 nC makes this device the ideal energy efficient solution for higher current, space constrained applications.
  
  
  

• 10/12/10 - Central Semiconductor Corp. announces the introduction of the CMLM0574 integrated MOSFET and Schottky diode packaged in the ultra miniature SOT-563 surface mount case. The CMLM5074 consists of a 30V, 450mA N-Channel MOSFET and a 40V, 500mA low V_F Schottky diode. This integrated device is optimal for space constrained applications where energy efficiency is a requirement.
  
  
  

• 9/7/10 - Central Semiconductor Corp. announces the introduction of the CMRD6263DO dual isolated 70V, 15mA Schottky diodes packaged in the ultra miniature SOT-963 surface mount case. This device has an outstanding low V_F of 0.395V typical and a fast switching speed of less than 5.0ns.
  
  
  

• 8/10/10 - The new Central Semiconductor CEDM7001 (N-Channel) and CEDM8001 (P-Channel) are 20V, 100mA MOSFETs packaged in the ultra miniature, low profile SOT-883L surface mount case. These devices have a rated continuous drain current of 100mA and a peak drain current of 200mA (tp<10µs).
  
  
  

• 7/21/10 - Central Semiconductor Corp. announces the introduction of the CMRSH-4DO dual isolated 40V, 200mA Schottky diodes packaged in the ultra miniature SOT-963 surface mount case. This device has an outstanding low V_F of 0.35V and a fast switching speed of 5.0ns.
  
  
  

• 6/2/10 - Central Semiconductor Corp. announces the release of the CMPS5064 Silicon Controlled Rectifier (SCR) due to high customer demand. This device packaged in SOT-23 is a 400V, 0.8A SCR designed for applications with space constraints requiring a fast switching high voltage device.
  
  
  

• 4/21/10 - Central Semiconductor Corp. announces the release of the CMRDM3575 dual complementary N and P-Channel MOSFETs. This device consists of a 20V, 160mA N-Channel and a 20V, 140mA P-Channel MOSFET packaged in the ultra miniature SOT-963 surface mount case. This new device is an integrated solution designed for circuits requiring both N-Channel and complementary P-Channel MOSFETs.
  
  
  

• 2/25/10 - Central Semiconductor Corp. announces the release of the CMLM8205 Multi Discrete Module in the SOT-563 surface mount package. This device features a 50V, 280mA P-channel enhancement mode MOSFET and an isolated 40V, 500mA low V_F Schottky diode. The MOSFET has a minimum gate threshold of 1.0V and the Schottky diode has a low forward voltage drop of 0.35V at 100mA.
  
  
  

• 1/26/10 - Central Semiconductor Corp. announces the release of the CBRHDSH2-100 Schottky Bridge Rectifier packaged in the HD DIP case. This new energy efficient device has a low reverse leakage current of 0.7uA and addresses the need for a space saving 2A, 100V full wave bridge rectifier essential for today’s power management, solid state lighting, and power over ethernet applications.
  
  
  

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