PCN #
|
Extent of change
|
| 101 |
Dimension change to all Bridge Rectifiers in SMDIP package |
| 102 |
Dimension change to all Bridge Rectifiers in DIP package |
| 103 |
TO-92 -18R lead formed package |
| 104 |
SOD-80 cylindrical case replaced by flat SOD-123 case. |
| 105 |
Small signal wafer thickness reduced from
9.0 mils to 7.1 mils. |
| 106 |
5.0W Zener diodes packaged in the AX-5W case
replaced by devices packaged in the DO-201 case. |
| 107 |
An overall reduction of the die area.
The CP192V chip process currently measures 13 x 17 mils and is being replaced by the CP392V chip process which measures 11 x 11 mils.
The CP592V chip process currently measures 12 x 20 mils and is being replaced by the CP792V chip process which measures 11 x 11 mils. |
| 108 |
An overall reduction of the die area.
The CPZ19 chip process currently measures 17.7 x 17.7 mils and is being replaced by the CPZ28 chip process which measures 13 x 13 mils. |
| 109 |
An overall reduction of the die area.
The CPD41 chip process currently measures 20 x 20 mils and is being replaced by the CPD93V chip
process which measures 12.8 x 12.8 mils. |
| 110 |
Chip process CPD64, Low Leakage Diode discrete semiconductors, wafers, and die in chip form.
The overall wafer diameter is being increased from 4 inch to 5 inch.
The overall die thickness is being reduced from 8 mils to 5.9 mils. |
| 112 |
The leadframe used to manufacture the TLM833 case has been changed to allow device singularization to be performed by sawing instead of punching. |
| 113 |
All discrete semiconductor devices manufactured in the SOD-123, SOT-23, and SOT-323 packages.
Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire. |
| 116 |
Schottky diodes manufactured in the SOD-123, SOT-23, and SOT-323 packages and Transient Voltage Suppressors manufactured in the SOT-23 package.
Tin (Sn) wafer backside metal has been added as a qualified material in addition to the currently used gold (Au) backside metal. |
| 117 |
All surface mount Current Limiting Diodes (CLDs) manufactured in the SOD-80 case.
Devices that are presently packaged in the SOD-80 case are being replaced by their electrical equivalents in the epoxy molded SOD-123FL case. |
| 118 |
Chip process CP316V, NPN high voltage transistors, wafers, and die in chip form.
The CP316V chip process currently measures 20 x 20 mils and is being replaced by the CP336V chip process which measures 17.3 x 17.3 mils. |
| 119 |
Small signal discrete semiconductor wafers. Wafer diameter has been changed from 4” to 5”. This change does not affect the physical or electrical characteristics of any device.
Gross die quantities per wafer have been increased. |
| 121 |
Zener diodes and switching diodes in the DO-35 glass case. Alternate marking format has been added to product line. |
| 123 |
BAW101, dual, isolated, high voltage switching diodes in the SOT-143 epoxy molded case. Alternate marking code has been added to product line. |
| 124 |
All discrete semiconductor devices manufactured in the SOT-563 package.
Alloy42 lead frame has been added as a qualified material for SOT-563 manufacturing in addition to the currently used copper alloy lead frame. |
| 125 |
CPD69 wafer process: 1 Amp, glass passivated, standard recovery rectifiers.
Overall wafer thickness has been increased from 8.5 mils to 12.5 mils. |
| 126 |
Chip process CP214, NPN RF transistors, wafers, and die in chip form.
Die size and die pattern change. The CP214 chip process currently measures 16 x 16 mils and is being replaced by the CP229 chip process which measures 21.7 x 21.7 mils. |
| 127 |
Chip process CPZ18, Zener Diode discrete semiconductors, wafers, and die in chip form.
An overall reduction of the die area and die thickness. The CPZ18 chip process currently measures 13.8 x 13.8 x 7.5 mils and is being replaced by the CPZ28X chip processes which measures 13 x 13 x 5.5 mils. |
| 128 |
BAV45, Silicon Picoampere diode manufactured in the TO-18 TWO LEADED metal case.
The Matte tin (Sn) plating step has been removed from the manufacturing process. |
| 129 |
Chip process CP195, NPN small signal transistors, wafers, and die in chip form.
The CP195 wafer process has been discontinued and replaced with the CP318V wafer process. The CP195 chip process measures 30 x 30 mils and the CP318V chip process measures 26 x 26 mils. See Figures 1 and 2 for die geometry. |
| 130 |
CBRSDSH5-40 and CBRSDSH5-60 full wave Schottky bridge rectifiers manufactured in the epoxy molded SMDIP case. The CBRSDSH5-40 and CBRSDSH5-60 are being discontinued and replaced with the CBRSDSH2-40 and CBRSDSH2-60. |
| 131 |
To consolidate the small signal PNP saturated switching product portfolio due to low sales volume, part # CM4209 in the TO-18 metal case has been developed as Central's primary device for low to medium current, PNP, high speed saturated switching applications as a replacement for “Part Numbers Affected” on attached list. |
| 132 |
All discrete semiconductor devices manufactured in the SOT-89 package. Extent of Change: Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire. Reason for Change: This change will insure an uninterrupted flow of product and provide increased flexibility for supply chain management. |
